Product Showcase

  1. GaN RF Power Transistor: T1G6003028-FS

    This GaN RF Power Transistor operates in the DC-6 GHz frequency range. It’s ideal for applications involving jammers, military and civilian radar, test instrumentation, professional and military radio communications, and wideband or narrowband amplifiers.

  2. 10-52 MHz TCXO: Model 520

    This temperature compensated crystal oscillator (TCXO) operates in the 10-52 MHz frequency range. It features an operating voltage of +1.8Vdc ~ +2.5Vdc, an operating temperature of -40°C to +85°C, RoHS/Green compliance, a clipped Sine Wave output, an optional voltage control for frequency tuning (VCTCXO) and more.

  3. High Linearity Power Amplifier: MMA25312B

    This high linearity power amplifier (PA) is ideal for applications in the 2300 to 2700 MHz range using external matching components with a 3 to 5 volt supply. It’s also ideal for 2400 MHz ISM applications, WLAN (802.11g), WiMAX (802.16e) and wireless broadband mesh networks.

  4. Dual Stage Low Noise Amplifier (LNA): MML09212H

    This dual stage low noise amplifier operates in the 400-1400 MHz frequency range and is ideal for use in picocell, femotocell, tower-mounted amplifier, receiver front end circuit, cellular infrastructure, and other low noise, high linearity applications.

  5. GaN on SiC SPDT Switches

    These three GaN on SiC SPDT Switches collectively cover the DC to 18 GHz frequency range. They’re ideal for electronic warfare (EW), radar, high power communication systems, and other high power switching applications. Specifications can be found via the download links below.

  6. High Power RF Amplifier for WLAN Applications: SST11CP16

    The SST11CP16 High Power RF Amplifier is designed to extend the range of 802.11ac systems. Its low EVM and high linear power make it an ideal option for set-top boxes, routers, access points, and other WiFi devices that require data rates of up to 3 Gbps for applications such as wireless streaming video.

  7. Wi-Fi PICtail™ Daughter Boards

    These daughter boards can be used to develop Wi-Fi applications when used with Microchip’s 8, 16, and 32-bit PIC® microcontrollers. They feature an FCC/CE/IC certified 2.4 GHz IEEE 802.11b/g transceiver, configurable transmit power, ultra-low power, 4, 8, 16, and 32-bit MCU compatibility, and more.

  8. High Resolution Cooled NIR InGaAs Camera Xeva-1.7-640

    Xenics designed the Xeva-1.7 640 to provide excellent image quality in advanced research with SWIR imaging. The Xeva-1.7-640 is perfectly suited for applications that require high resolution at medium sensitivity operation. The Xeva-1.7-640 is a near infrared camera that employs a 640x512 InGaAs FPA. The Xeva-1.7-640 SWIR camera interfaces to a PC via USB 2.0 or CameraLink. In one compact housing, the Xeva-1.7-640 digital camera combines a thermo-electrically cooled InGaAs detector head and the control and communication electronics. The Xeva-1.7-640 unit is available with standard (up to 1.7 μm) InGaAs detector arrays and comes in various speed versions: 25 Hz and 90 Hz. It allows you to choose the most suitable detector camera configuration for your specific application.

  9. Near-Infrared (NIR) Streak Camera (C11293)

    Hamamatsu’s C11293 streak camera features a deep-cooled InP/InGaAs streak tube that offers enhanced NIR sensitivity for low-light picosecond time-resolved measurements. It can run various repetition rates up to 20 MHz and measure with 20 ps (FWHM) time resolution.

  10. Deuterium Light Source with Ultrahigh Brightness: L11798/L11799 Series

    Hamamatsu’s L11798 and L11799 deuterium light source units offer ultrahigh brightness and ease of use for a wide variety of UV applications such as semiconductor inspection, film thickness measurement, UV-visible spectroscopy, and environmental analysis.