Veeco MBE System Selected By Fraunhofer To Produce Electronic Devices
"This GEN20A features the most complete and integrated nitride solution package available today, and is the second cluster-style Veeco MBE system ordered by Fraunhofer" said Jeffrey Hohn, VP/General Manager, Veeco MBE Operations. The system is capable of RF and NH3-based nitride MBE, which is ideal for their small scale production of HEMTs (high electron mobility transistors)."
Dr. Martin Walther, Epitaxy Department Head from Fraunhofer stated, "We are very pleased with the exceptional uptime and material quality of our current Veeco GEN200 MBE System. Because the GEN20A has a similar architecture to the GEN200 platform, we consider it the superior choice to facilitate our R&D of nitride-based electronic devices."
The GEN20 platform integrates features from the Veeco GEN II and GEN200 MBE systems. Featuring an automated cluster tool wafer handling system, the GEN20A enables growth capabilities, ability to load up to 24 platens, and user-defined processing. The system can grow single 4" or three 2" wafers, utilizing a vertical source-to-substrate geometry that enables large source capacity and optional integrated e-beam material delivery. For nitride applications, the system can be tailored for RF nitrogen MBE or ammonia-based MBE utilizing Veeco's nitride components. Large, multiple, direct-coupled pumping ports and optimal cryopanel pumping enable the GEN20 to provide superior control and purity of the growth environment for better material quality. The GEN20A is suitable for high-utilization laboratories and for scaling from lab to fab operations.
SOURCE: Veeco Instruments, Inc.