Two New Advanced Dielectrics

Dow Corning Corporation Corporation today announced the availability of Dow Corning Corporation Z3MS CVD Dielectric and Dow Corning Corporation XLK Spin-on Dielectric, two advanced materials that offer customers increased performance for today and extendibility for the future.

Z3MS CVD Dielectric is a high-performance precursor, compatible with copper damascene and aluminum applications. This PECVD technology is designed to be used on existing equipment and processes. The dielectric offers a dielectric constant of 2.7 and the same one-chamber processing technology developed for silane-based dielectric film deposition.

Z3MS CVD Dielectric has achieveed benefits for film applications including copper diffusion barrier, gap fill (3:1 AR, 0.2-micron gaps), damascene etch-stop (selectivity > 2x SiN), improved passivation (SiC) and low cost of ownership. Z3MS CVD Dielectric also is designed to improve process safety. It is a noncorrosive, nonpyrophoric, organosilicon gas.

XLK Spin-on Dielectric is a low-k film designed to meet the requirements of (0.13 micron processes. Based on the production-proven HSQ resin found in FOx Flowable Oxide, the largest selling, low-k spin-on dielectric in the market, the XLK Spin-on Dielectric product family consists of solutions for films with dielectric constants of 2.5, 2.2 and 2.0.

XLK Spin-on Dielectric products use commercially available spin-on and cure equipment and are designed as intermetal dielectrics for both aluminum and copper interconnects.

As a result of an extremely fine and uniform pore structure (~2.4nm average pore size for XLK 20), XLK Spin-on Dielectric films offer optimized properties which can significantly improve the viability of integration including moisture uptake resistance, low stress values and stability to thermal cycling.

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