Tungsten Chemical Vapor Deposition (CVD) System
Source: Applied Materials, Inc.
The Sprint Tungsten CVD Centura system's high pressure tungsten deposition process enables void-free filling of critical contact and via structures in 0.18 micron and below chip designs to permit high device yields
Applied Materials, Inc.Tungsten CVD Centura system's high pressure tungsten deposition process enables void-free filling of critical contact and via structures in 0.18 micron and below chip designs to permit high device yields.
The system has a dual-pressure process that begins with a low pressure nucleation step for growing a thin tungsten seed layer. The system then switches to a high pressure (300 Torr) regime for void-free bulk-fill of the contact and via structures at a throughput of more than 60 wafers per hour (wph). Wafer temperature remains below 400°C at all times, further increasing device reliability and ensuring compatibility with advanced low k dielectrics.
<%=company%>, 3050 Bowers Ave., Santa Clara, California 95054. Tel: 408-727-5555; Fax: 408-986-8352
This website uses cookies to ensure you get the best experience on our website. Learn more