News | April 24, 2024

Transphorm And Weltrend Semiconductor Launch New Integrated GaN System-In-Packages

Goleta, CA and Hsinchu, Taiwan - ( BUSINESS WIRE ) - Transphorm, Inc. (Nasdaq: TGAN), a global leader in robust GaN power semiconductors, and Weltrend Semiconductor Inc. (TWSE: 2436), the global leader in USB Power Delivery (PD) Controller Integrated Circuits (ICs) for Adapters, today announced the availability of two new GaN system-in-packages (SiPs). In combination with Weltrend's flagship GaN-SiP product introduced last year, the new devices form the first SiP product family based on Transphorm's SuperGaN® platform.

The new SiPs, called WT7162RHUG24B and WT7162RHUG24C, integrate Weltrend's high-frequency multimode flyback PWM controller with QR mode and valley switching and Transphorm's SuperGaN FETs with 150 mΩ and 480 mΩ, respectively. Like its 240 mΩ predecessor (WT7162RHUG24A), the devices can be combined with USB-PD or programmable power adapter controllers to form a complete adapter solution. Notably, they also offer several innovative features including UHV Valley Tracking Charging Mode, Adaptive OCP Compensation and Adaptive Green Mode Control, which enable users to deliver high-quality power supplies faster and with the simplest design approach to develop with fewer components.

“The launch of our first GaN SiP last year was an important milestone in the development of our company. “This was the beginning of a new GTM strategy for the AC/DC converter market,” said Wayne Lo, Weltrend’s vice president of marketing. “Today's announcement confirms that we will continue to serve this area with a broader selection of assemblies that support more product performance classes. A total package solution with Transphorm's SuperGaN platform offers a simple design with unparalleled performance for devices that now range from USB-C PD power adapters at just 30 watts to chargers at nearly 200 watts - a unique capability of GaN technology from Transphorm.”

End-product manufacturers are looking for ways to develop new adapters that have lower BOMs and offer versatility, fast charging times, and higher power outputs. Additionally, in many cases they attempt to offer universal chargers with multiple ports and/or multiple port types, all in a smaller form factor and lower weight.

Some of the key benefits of Transphorm's Normally Off D-Mode SuperGaN platform include industry-leading robustness (+/- 20V gate voltage range with 4V noise immunity) and reliability (<0.05 FIT) as well the possibility of increasing the power density by 50% compared to silicon. Weltrend's elegant SiP designs leverage these advantages along with the company's innovative technologies to create a virtually plug-and-play solution that accelerates the development process while reducing the form factor.

“SiPs are an important component selection option when it comes to the needs of adapter and charger manufacturers,” said Tushar Dhaygude, Vice President of Worldwide Sales and FAE, Transphorm. “These systems require effective power conversion that, while easy to use and has built-in features, also minimizes learning curves to ensure quick uptake. The first component presented has already confirmed the performance and versatility of the SuperGaN-SiP concept. The new devices announced today demonstrate our two companies’ growing commitment to providing customers with choice.”

Important Specifications


WT7162RHUG24B (or)

WT7162RHUG24C (or)


240 mΩ

150 mΩ

480 mΩ

Vds min

650 V


&GT 93%

Power density

26 W/in 3

Max. frequency

180 kHz

Operation over a wide
output voltage range

USB-C PD 3,0
PPS 3,3 V~21 V


24-pin 8x8 QFN package

Key Features



Adjustable GaN FET gate slew rate control

Balanced efficiency and EMI compliance

No external VDD linear regulator required
(700V Ultra HV starting current is derived directly from AC mains voltage)

Lower number of components

Reduced case inductance

Maximizing chip performance

Fits into a standard 8x8 QFN-FF package

Enables low profile, small footprint systems

Target applications and availability

Weltrend's SuperGaN SiP family is optimized for use in high-performance, low-profile USB-C power supplies for mobile and IoT devices such as smartphones, tablets, laptops, headphones, drones, speakers, cameras and more.

Further specifications for the building blocks can be found in the data sheets here:

The two new devices (WT7162RHUG24B and WT7162RHUG24C) are currently being sampled. Contact for more information.

About Transphorm

Transphorm, Inc., a global leader in the GaN revolution, designs and manufactures high-performance, high-reliability GaN semiconductors for high-voltage power converters. With one of the largest power GaN IP portfolios of more than 1,000 owned or licensed patents, Transphorm produces the industry's first JEDEC and AEC-Q101 qualified high-voltage GaN semiconductor devices. The company's vertically integrated device business model promotes innovation at all stages of development: design, manufacturing, device and application support. Transphorm's innovations push power electronics beyond the limits of silicon, achieving over 99% efficiency, 50% higher power density and 20% lower system costs. Transphorm is headquartered in Goleta, California, with manufacturing facilities in Goleta and Aizu, Japan. For more information, visit . Also follow us on Twitter @transphormusa and WeChat at Transphorm_GaN.

About Weltrend Semiconductor Inc.
Founded in 1989 in the “Silicon Valley of Taiwan”, the Hsinchu Science Park, Weltrend Semiconductor, Inc. (TWSE: 2436) is a leading fabless semiconductor company specializing in the planning, engineering, testing and application development, and sales of mixed -Signal and digital IC products in power supplies, motor controls, image processing and more in many application areas. For more information, visit .

The SuperGaN trademark is a registered trademark of Transphorm, Inc. All other trademarks are the property of their respective owners.

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