Ti/TiN CVD System

The CVD Ti/TiN Centura uses titanium chloride (TiCl4) source chemistry to deposit titanium (Ti) and titanium nitride (TiN) liner/barrier layers in very advanced DRAM contact structures for 256Mb, 0.18µ generation devices and beyond. The system's TiCl4 TiN process is also suited for depositing the top electrode of gigabit-level capacitor structures in applications with Ta2O5 (tantalum pentoxide) dielectrics.

Multiple systems are already in use by customers; commitments for additional systems have already been received from semiconductor manufacturers in North America, Japan, Korea, and Taiwan. The system provides chipmakers with a simplified, sequentially integrated process using the company's proprietary chamber technologies.

In fabricating the contact structure, a robust layer of CVD TiCl4 Ti is first deposited using the company's Ti-xZ Plasma Enhanced CVD chamber. During deposition, the Ti film at the bottom of the contact is completely silicided (forming TiSi2) in-situ, thus providing a very low resistivity film and eliminating the need for a post-deposition anneal step.

For the barrier layer, a very thin, conformal layer of TiCl4 TiN film is then deposited using a thermal process in the company's CVD TiN-xZ chamber. This barrier layer ensures device integrity by preventing the diffusion of the metal fill into other areas of the device. The TiCl4-based Ti/TiN processes have been demonstrated to be effective in contact structures with aspect ratios as high as 15:1.

System throughput is as high as 35 wafers per hour. Customers opting for a stand-alone CVD Ti or CVD TiN system with a four-chamber configuration can process more than 70 wafers per hour. Marathon runs have validated the performance of the CVD chambers, showing production-proven manufacturability with process stability and particle performance.

Applied Materials, 3050 Bowers Ave., Santa Clara, CA 95054. Tel: 408-727-5555; Fax: 408-986-8352.