Thermal Optical System
APTOS Process Probe 2130 instrumented wafers are able to directly measure wafer temperature under plasma by using plasma-resistant phosphorescence-based fiber optic process probes instead of thermocouples or resistance temperature detectors. The sensors operate by measuring the exponential decay rate of light emitted from the sensors at the wafer, which correlates to temperature. The unique design embeds the probes into the bulk of the silicon and includes a silicon strip covering to block ambient light, enhance thermal contact with the wafer for greater accuracy, and protect the probes from plasma damage.
The system includes Process Probe 2130 fiber optic instrumented wafers and the Thermal MAP data acquisition and analysis system with data converter. Each wafer uses up to four sensors to provide repeatable real-time measurement in the range of 0° C to 130° C repeatable to ± 0.5° C, accurate to ± 1.0° C.
The system is qualified for TEL Unity IIe DRM, Lam 4520, an Applied Materials MxP, eMxP, and etch chambers; qualification for additional etch systems is currently in progress. The Process Probe 2130 fiber optic instrumented wafers are durable for high-density plasmas of 10w/cm2 power density and high RF and DC voltage bias potentials. They are available in 150 to 300 mm diameters.
SensArray Corporation, 3410 Garrett Dr., Santa Clara, CA 95054. Tel: 408-727-4656. Fax: 408-496-6929.