The Aspen LiteEtch

The Aspen II LiteEtch and Aspen III LiteEtch, use a proprietary ICP source, the same source used in the Aspen Strip. This physically remote ICP source uses a high pressure plasma process to produce a low energy plasma that achieves high etch rates with better etch rate uniformity, greater profile control and selectivity and low wafer damage while minimizing electrically charged particles that can damage sensitive semiconductor devices. With the transition from wet to dry processing for key application steps, Aspen LiteEtch combines enabling isotropic etch technology with the benefits of dry etch tools. These benefits include lower cost of ownership than wet stations, lower capital outlay than anisotropic etchers, savings in cleanroom floorspace and greater process automation for ease of use, as well as reduced chemical waste.

The Aspen LiteEtch systems use either the standard Aspen or Aspen II platform, together with one or two process chambers, or the Aspen III platform, with one, two or three process chambers. Each chamber processes two wafers at a time, while retaining single wafer process control. For most applications, system throughput typically varies with the process from 40 to 80 wafers per hour for a single chamber system and from 70 to 110 wafers per hour for a dual chamber-configured Aspen system.

Mattson Technology, Inc., 3550 W. Warren Avenue, Fremont, CA 94538. Tel: 510-492-5923; Fax: 510-657-0165.