The Aspen CVD

The Aspen III CVD system is based on the Aspen III platform and can be configured with one, two or three process chambers, with each chamber capable of processing two wafers at a time. The Aspen III CVD system deposits dielectric film and silane-based films and offers a full suite of plasma enhanced chemical vapor deposition (PECVD) applications. Depending on the film type, the Aspen III CVD can process up to 180 wafers per hour, affording a cost of ownership advantage not found on competitive systems. The Aspen III CVD features a small volume chamber design that allows shortened automatic clean times for increased system availability and uptime, while enabling higher deposition rates. The resulting higher throughput permits the use of slower, more consistent and less damaging process technologies than are economically feasible in conventional single wafer systems.

The PECVD technology processes wafers at relatively low temperatures - 400 degrees Celsius or less - required for processing after aluminum metallization layers are deposited on the wafer. Film stress and density can be controlled independent of process chemistry by the use of a low frequency radio frequency bias. Dual loadlocks isolate the process chamber from pressure and temperature fluctuations, reducing particulates and improving film quality and repeatability.

Aspen III CVD system is one of the first CVD bridge tools in the industry that is capable of handling both 200mm and 300mm wafer production without changing the process chamber. The flexible system design addresses the needs of large volume manufacturing where cost is a major consideration. Aspen III CVD has one of the smallest footprints available in 200 and 300mm PECVD tools and provides a throughput advantage for selected thin film applications, such as dual damascene processing applications, where more PECVD layers are required.

Mattson Technology, Inc., 3550 W. Warren Avenue, Fremont, CA 94538. Tel: 510-492-5923; Fax: 510-657-0165.