Product/Service

Tanox xZ Centura

Source: Applied Materials, Inc.
Applied Materials, Inc. announces the new Tanox xZ Centura, a high-throughput system to

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Applied Materials, Inc. announces the Tanox xZ Centura, a high-throughput system to deposit tantalum pentoxide (Ta2O5), a high dielectric constant (high [K]) material that allows increased bit density in memory devices. The new system will enable semiconductor memory manufacturers to significantly shrink the size of their capacitor structures, thus allowing more die per wafer and the extension of device designs into the gigabit generation. The Tanox xZ Centura's capacitor solution is applicable to the majority of next generation 256Mb/gigabit DRAM and embedded DRAM devices. The single-wafer, multi-chamber Centura platform also enables customers to integrate Ta2O5 deposition with Applied Materials' RTP XE (rapid thermal processing) chamber for polysilicon nitridation and Ta2O5 post-anneal on the same system to preserve critical interface properties in the capacitor stack.

Applied Materials, Inc., 2700 San Tomas Expressway, Santa Clara, CA 95051-0952. Tel: 408-986-3100; Fax: 408-986-0902.