Solid CVD Silicon Carbide Rings

Featured at Semicon West

Morton has expanded production capabilities for solid CVD silicon carbide rings, susceptors, and chamber components for 200mm and 300mm wafer processing. Morton's CVD silicon carbide ideally satisfies the semiconductor process engineer's need for wafer-handling and chamber components which perform well at extremely high temperatures (>1000°C) and offer ultra-high purity (>99.9995%). Using a large scale chemical vapor deposition (CVD) process developed at Morton, CVD silicon carbide components can be fabricated in plate sizes up to 700mm x 700mm x 20mm and tubes and liners up to 600mm diameter x 600mm high. The CVD process produces material with excellent machinability and uniform properties from lot to lot.

Solid CVD silicon carbide offers a high stiffness-to-weight ratio that allows components to have low mass and very thin cross sections while maintaining thermal stability. Low mass and high thermal conductivity result in better temperature uniformity across the wafer during processing. Additionally CVD silicon carbide components can be cleaned in hot HF/HCL cleaning cycles with minor degradation and are free of graphite and other sources of contamination. These properties result in components with very low particle generation and long lifetime. The advantages of CVD silicon carbide for 200 and 300mm semiconductor processing applications are clear: higher purity, longer life cycle, lower particle generation, and better temperature uniformity.

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