Silicon Carbide Rings

N/Aolid CVD SILICON CARBIDE RTP/epi rings and susceptors and plasma etch chamber components are available for 200mm and 300mm wafer processing. They satisfy the semiconductor process engineer's need for wafer-handling and chamber components which perform well at extremely high temperatures (>1500°C) and offer ultra-high purity (>99.9995%). Using a large scale chemical vapor deposition (CVD) process, these components can be fabricated in plate sizes up to 700mm x 700mm x 20mm and tubes and liners up to 600mm diameter x 600mm high. The CVD process produces material with excellent machinability and uniform properties from lot to lot.

This product offers a high stiffness-to-weight ratio which allows components to have low mass and very thin cross sections while maintaining thermal stability. Low mass and high thermal conductivity result in better temperature uniformity across the wafer during processing. Additionally the components can be cleaned in hot HF/HCL cleaning cycles with minor degradation and are free of graphite and other sources of contamination. These properties result in components with very low particle generation and long lifetime.

<%=company%>, 185 New Boston Street, Woburn, MA 01950. Tel: 781-933-9243. Fax: 781-933-5142.