Semiconductor Ion Implantation
We offer a broad range of ion implantation capabilities including:
Whether your research calls for gallium arsenide dopants, rare-earth species, or transition/noble metals, our specialty is meeting even the most unusual requirements. In addition, Implant Sciences' experienced technical personnel are available for no charge consultations and process modeling.
The rare-earth and noble metal ions are generated using a proprietary ion source which produces high currents of these ion beams. A specially designed end station accommodates odd-shaped samples. Wafers can also be ion implanted while held at high temperatures within a tube furnace or mounted on a LN2 cooled dewar.
Implant Sciences Corporation, 107 Audubon Road, Suite 5, Wakefield, MA 01880. Tel: 781-246-0700; Fax: 781-246-1167.