Freeware | February 10, 2005

Research Report: GaN HEMT Wafers

Source: NTT Science and Core Technology Laboratory Group
GaN-based HEMTs offer a unique combination of high electron velocity and breakdown fields. Therefore, they have attracted a great deal of interest due to their potential for high-voltage microwave power applications such as cellular phone base stations, wireless internet access systems, and intelligent transport systems. NTT has developed the growth technologies of high resistivity GaN layer and extremely flat AlGaN layer.
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