Colorado Springs, CO - Ramtron International Corporation, a leading developer and supplier of nonvolatile ferroelectric random access memory (F-RAM) and integrated semiconductor products, today launched the first parallel device in a family of new parallel and serial F-RAM products that offer higher-speed read/write performance, lower voltage operation, and optional device features. The newest device in Ramtron's V-Family of F-RAM products is the FM28V100, a 1-megabit (Mb), 2.0 to 3.6-volt, parallel nonvolatile RAM in a 32-pin TSOP-I package that features fast access, NoDelay writes, virtually unlimited read/write cycles, and low power consumption. The FM28V100 is an ideal upgrade from 1Mb battery-backed SRAM in industrial control, metering, medical, automotive, military, gaming, and computing applications, among others. In addition to the FM28V100, Ramtron recently announced the 512Kb FM25V05 and 1Mb FM25V10 serial SPI V-Family products.
"The FM28V100 adds a lower cost and higher performance 1-megabit alternative to Ramtron's byte wide product portfolio," explains Duncan Bennett, Ramtron Marketing Manager. "The FM28V100 provides an easy upgrade path for battery-backed or NVSRAM users that want to eliminate batteries or external capacitors from their systems."
About the FM28V100
The FM28V100 is a 128K x 8 nonvolatile ferroelectric random access memory (F-RAM) that reads and writes like a standard SRAM and retains data after power is removed. The FM28V100 provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Removing the battery from the system allows the system to operate over a wider operating temperature and is better for the environment. Fast write timing and virtually unlimited write endurance make F-RAM superior to other types of memory.
In-system operation of the FM28V100 is similar to other RAM devices, allowing it to be used as a drop-in replacement for standard SRAM. Read and write cycles may be triggered by toggling a chip enable pin or by simply changing the address. F-RAM memory is nonvolatile due to its unique ferroelectric memory process, making it ideal for nonvolatile memory applications that require frequent or rapid writes. The device operates over the full industrial temperature range of -40°C to +85°C.
About the F-RAM V-Family
The Ramtron V-Family of F-RAM products are built on an advanced 130nm CMOS manufacturing process developed by Ramtron and Texas Instruments that enables improved device specifications including:
SOURCE: Ramtron International Corporation