PVD Technology

Applied Materials, Inc.self-ionized plasma) PVD (physical vapor deposition) technology for depositing critical barrier/seed films in copper-based interconnects and liner/barrier layers in aluminum structures. Using a new magnetron plasma source, process chamber and next-generation e-chuck design, SIP combines 0.15 micron and beyond technology while enabling throughputs of up to 70 wph (wafers per hour).

The SIP chamber's new magnetron source increases ionization of the metal atoms in the chamber, providing good step coverage in small geometry structures. A new generation e-chuck design with bias and low temperature capability ensures thermal control and minimal film overhang.

For copper-based devices, SIP tantalum/tantalum nitride (Ta/TaN) and SIP copper seed layers are used for lining the interconnect structure to prevent contamination and enhance subsequent bulk copper fill. This completely integrated sequence, preceded by a reactive pre-clean, operates under high vacuum, providing excellent film adhesion and oxide-free interfaces for maximum device speed and high film reliability.

For aluminum-based interconnect applications, SIP technology is used to deposit titanium (Ti) as an underlayer in an advanced aluminum slab/interconnect stack structure. This layer provides exceptional
electromigration resistance for high reliability. In addition, SIP is used to deposit Ti and titanium nitride (TiN) liner/barrier films in contact and via structures for subsequent bulk tungsten fill. Both processes are performed using a single SIP chamber, enabling simplified operation and increased user flexibility.

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