Positive Tone Photodefinable Polyimide
HD MicroSystems L.L.C. allows semiconductor fab manufacturers to implement a new polyimide stress buffer procedure or convert an existing wet-etch polyimide process over to a photodefinable polyimide without changing existing reticles or developer tracks.
HD-8000 is ideal for use as a silicon nitride etch dry mask for all IC applications. It has an aspect ratio of 2 to 1 and is capable of imaging four micron features in eight micron cured films.
To assure good wafer coating uniformity and keep the backside of the wafer clean, HD-8000 will be offered with an NMP-free, edge bead remover (EBR), PA-800E.
Based on a true aromatic polyimide backbone, HD-8000 offers thermal stability and mechanical integrity. Compared to conventional polyimides, it has a fast cure cycle of 90 minutes for improved throughput. The new product has a Tg (glass transition temperature) of 300 °C and a cured film thickness range of 5 to 10 microns. The polyimide can be imaged with I-line or G-line steppers or broadband phototools.
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