Polysilicon CVD Technology
Polysilicon's higher electron mobility allows display makers to build driver circuitry on the edge of the panel, rather than requiring separate chips. It also cuts the number of electrical contacts to the panel by up to 95 percent, for brighter viewing. The smaller pixels and higher electron mobility lead to higher resolution displays which are suitable for video applications.
The polysilicon technology features a multi-step (SiN/SiO2/a-Si) single-chamber deposition process that provides high quality, hydrogen-controlled polysilicon precursor film at temperatures up to 430°C. A separate pre-heat/post-deposition chamber reduces hydrogen in the deposited silicon film while increasing system throughput. The reduced hydrogen content in the polysilicon precursor film enables rapid conversion of the film into polysilicon with an excimer laser anneal process performed in a separate system.
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