Plasma System 300 Standard
Source: Tepla Inc.
Damage-free Resist Ashing and Wafer Cleaning for Semiconductor and Microelectronics Manufacturing
Damage-free Resist Ashing and Wafer Cleaning for Semiconductor and Microelectronics Manufacturing
- Easy resist Removal following High dose Implant or
- Dry Etching
- Lowest Cost-Of-Ownership of all Asher Technologies
- High Productivity, Simple Operation
- 200 mm Wafer Capability
- Microprocessor Controller
- Minimum Footprint, Flushmount Cabinet
SPECIFICATION
Applications
- Photoresist ashing (stripping) after high dose ion implantation, dry etching etc.
- Substrate cleaning after wet processing or prior to wet etching (descum)
- Removal of organic passivation layers and resists
- Isotropic etching of silicon, silicon nitride, polymide etc.
Primary Microwave Plasma Provides:
- Primary plasma discharge for high ash rate
- Microwave energy for highest chemical efficiency
- Guaranteed low-damage plasma process
- Non-critical overash for safe removal of overlaid resist films
Batch Processing Provides:
- High productivity
- Reliability of simple and easy controllable technology
- Slow temperature ramp-up to avoid resist popping
- Enhanced desorption of chemical residues
- SOG curing capability
- Backside ashing
Tepla Inc. , 1321 Valwood Parkway, Suite 400, Carrollton, TX 75006. Tel: 972-247-0053; Fax: 972-247-0405.