Performance SiC
Plasma etch processes, especially oxide etch, benefit from the high purity and etch resistance of Performance SiC. These parts last longer than those made of other materials, reducing warranty costs. The recently developed low resistance CVD silicon carbide is ideal for RF coupling in the chamber.
Single-wafer epitaxy processes also benefit from the purity and corrosion resistance of CVD SiC. Thermal shock resistance and stiffness maintain flatness even through extreme temperature cycling. Excellent thermal conductivity combines with the ultimate flat chuck to ensure uniform wafer heating.
RTP and single-wafer CVD processes also benefit from CVD SiC's thermal shock resistance, ability to maintain flatness, and excellent thermal conductivity. Plasma processes may incorporate low resistance silicon carbide for susceptors, electrodes, or coupling components. CVD SiC can also be used for processing chambers and liners.
CVD Silicon Carbide has also been used for focus rings in lithography tools; and for slip rings, and lift pins in many types of tools including wet and dry clean tools and ion implanters.
Low resistance CVD silicon carbide heaters are used in process chambers where there are requirements for rapid heating to elevated temperatures, low contamination and increased cycles.
Performance Materials, Inc. is a vertically integrated manufacturer of ultra-pure CVD silicon carbide, pyrolytic boron nitride, and other advanced ceramic materials for the semiconductor and compound semiconductor industries.
Performance Materials, Inc., 4 Park Ave., Hudson, NH 03052. Tel: 603-598-9122; Fax: 603-598-9126.