ON Semiconductor Introduces Integrated Charging And Power Switching Circuit
The NUS3116 is an integration of main power switch, -12 volt (V), -6.2 amps (A), µCool single P-channel MOSFET to handle the main battery switch function and two internal low saturation PNP transistors to handle dual channel charging elements. With 40 mili ohm maximum RDS(ON), the main switch MOSFET minimizes power loss during battery operation of portable electronics. The dual low-Vce(sat) transistors provide good thermal performance for charge currents up to 2 A, and have a Vce voltage drop of less than 240 mili volts (mV) at the end of the charging.
Offered in a DFN-8 package that requires only 9 mm2 of board space, the NUS3116 provides a board savings of more than 20 mm2 versus typical solutions using three TSOP-6 packages with interconnect space. The package's low profile of 0.8 mm allows the device to be used in small form factor designs. Use of the NUS3116 integrated device also reduces the complexity of circuit board layout.
The NUS3116 is available in a Pb-free DFN-8 package, and is priced at $0.80 per unit in 3000 unit quantities.
For additional information, visit www.onsemi.com or contact Sam.Abdeh@onsemi.com.
SOURCE: ON Semiconductor