Nitride Deposition System

Applied Materials, Inc. Centura, a single-wafer LPCVD (low pressure chemical vapor deposition) system is designed for depositing critical silicon nitride (SiN) film layers in transistor structures of 0.18 micron and below devices. This system meets the requirements of advanced, volume production environments, offering advantages in technology, productivity and cost of ownership (COO) for a variety of process applications.

The system allows chipmakers to decrease a wafer's thermal exposure by more than an order of magnitude to enable sensitive sidewall spacer, etch stop, shallow trench isolation layers and other applications. The system's SiH₄ chemistry eliminates the formation of NH₄Cl and enables a 4x improvement in particle performance over furnaces. This system uses Remote Plasma Clean technology, which is designed to further reduce particles, boost throughput, extend hardware and consumables lifetime, and emit virtually no global warming gases.

The system's xZ chamber uses a dual-zone ceramic resistive heater that provides temperature uniformity and productivity over a range of temperatures and pressures. High system throughputs are achieved by varying the deposition rate and holding total process time constant. The platform can be configured to hold up to four process chambers.

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