Next Generation Wafer Cleaning Technology
The next-generation, single-wafer cleaning technology will use supercritical carbon dioxide to remove photoresist and etch residue from low-K dielectric films and high aspect ratio vias/trenches. The process uses pressure and temperature control to bring liquid CO2 to a supercritical state, combines the CO2 with a co-solvent(s), and exposes the wafer surface to the resulting supercritical fluid.
Application-specific formulations enable cleaning of spin-on and CVD low-K dielectrics without affecting the dielectric constant. The low surface tension of the supercritical fluid allows for penetration of, and solvent removal from deep submicron features. Photoresist and photoresist residue removal with supercritical carbon dioxide minimizes the use of hazardous chemicals, eliminates water consumption, eliminates the possibility of plasma damage, and reduces the number of process steps.
<%=company%>, 39 Old Ridgebury Road, Danbury, CT 06810-5113, Phone: 972.479.8612, Fax: 1.800.447.5040