Modular GEN III MBE System

Applied Epiodular GEN III MBE (Molecular Beam Epitaxy) system, is an extension of the MOD GEN II system. Designed for R&D and low-volume applications where a 4in, or 3x2in, wafer system is preferred, the system features 12 effusion ports, a dual-zone substrate heater, and linear motion shutters. The system is well suited for the manufacture of challenging devices, such as optoelectronic compound semiconductors.

The system also features performance MBE components, including SUMO effusion cells, Valved Crackers and MBE-specific electronics.

<%=company%>, 4900 Constellation Drive, St. Paul, MN 55127, TEL (651) 482-0800 • FAX (651) 482-0600