Microsemi Announces New Line Of Power MOSFET And FREDFET Devices

Irvine, CA - Microsemi Corporation has launched the first 15 devices in its newest generation of POWER MOS 8 products.

These new MOS 8 MOSFET and FREDFET devices are designed for high power, high performance switch mode applications including power factor correction, server and telecom power systems, solar inverters, arc welding, plasma cutting, battery chargers, medical, semiconductor capital equipment and induction heating.

The MOS 8 line also features improved oscillation immunity and reduced EMI, low RDS(on), low gate charge, and low switching losses. The devices are avalanche energy rated, with lower thermal resistance. Likewise, the FREDFETs are available with fast recovery body diodes.

Microsemi engineers employed advanced design techniques to optimize capacitances and gate resistance. The result is a family of devices with improved oscillation immunity, lower peak slew rates, reduced EMI and high dv/dt ruggedness capability. These features combine to simplify filtering and paralleling of multiple devices in high power applications.

In addition, advanced manufacturing processes for the new MOS 8 products have lowered their thermal resistance and enabled higher current ratings for each die size and package type. Low capacitance and gate charge specifications enable high switching frequency capability and low switching losses.

All MOS 8 devices are 100 percent tested for avalanche energy capability and are offered only in RoHS compliant packages.

"Our new POWER MOS 8 family utilizes advanced technologies and manufacturing processes to deliver what our customers have asked for in our new generation of MOSFETs and FREDFETs," said Russell Crecraft, Vice President and General Manager of Microsemi's Power Products Group in Bend, Oregon. "Our MOS 8 family will offer the industry's broadest range of high voltage, high power, high performance MOSFETs, FREDFETs and PT IGBTs," he said.

MOS 8 FREDFETs have all of the features and advantages of MOS 8 MOSFETs, with the added benefit of a faster body diode recovery speed of <250ns. These devices provide superior ruggedness and reliability in applications where the body diode carries forward current, such as popular zero voltage switching (ZVS) bridge topologies.

First to be released in the POWER MOS 8 family are ten MOSFET and five FREDFET devices with power ratings from 19 to 75 amps and voltage specifications from 500 to 1200 volts. Additional power/voltage combinations will be introduced throughout the balance of 2006 and into early 2007.

The first FREDFETs, rated at 500 and 600 volts, will feature a 150ns recovery time and are scheduled for release in the fourth quarter of 2006. MOS 8 IGBTs with 600 and 900V ratings will follow in early 2007.

SOURCE: Microsemi Corporation