Metal PVD Solutions

Novellus Systems Inc.lus' INOVA delivers a PVD solution which is critical to the production of advanced semiconductor logic and memory devices.

The INOVA is an advanced PVD system that delivers highly conformal barrier and seed layers for copper metallization. The Hollow Cathode Magnetron (HCM) ionized source technology enables high quality Ta, TaN, and Cu films to be deposited into sub-0.25µm dual damascene structures. The HCM copper seed has been successfully integrated with the company's SABRE Electrofill process for complete copper filling of up to 6:1 aspect ratio geometries.

The HCM Ti/TiN films provide a diffusion barrier for CVD W applications, and these films have been integrated with the company's ALTUS CVD W system. The INOVA also delivers advanced aluminum interconnect processes with the MaxFill low-pressure aluminum plug solution.

The INOVA xT is a 300 mm metallization system that delivers physical vapor deposition (PVD) solutions to the 0.10-micron technology node and beyond. It delivers a superior barrier/seed layer that enables fill of copper dual damascene interconnect structures at high aspect ratios. The INOVA xT's patented three-dimensional HCM source delivers a highly directional ionized flux that increases sidewall and bottom coverage and reduces overhang and asymmetry. This technology enables void-free electrofill with copper seed thicknesses as thin as 800 angstroms, increasing throughput and reducing cost of consumables.

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