MetaPULSE C is optimized for current generation aluminum interconnect applications but can be field upgraded to measure copper and its related films
Rudolph Technologies is optimized for current generation aluminum interconnect applications but can be field upgraded to measure copper and its related films. The MetaPULSE X Cu supports all aluminum interconnect processes and the silicides, ultra-thin barriers, and tungsten processes in addition to the barrier, seed, and electroplated copper processes used in advanced dual-damascene processes. Both are available in 200 mm and 300 mm configurations. The systems monitor actual product wafers with short- and long-term repeatability of about 0.5 Å at up to 60 wafers per hour.
The system incorporates PULSE Technology, an ultrasonic technique for nondestructive measurement of thick and thin opaque films. When first introduced, it was used for controlling aluminum films as well as the thin silicides and liner/barriers for tungsten plugs associated with aluminum processing. The Rudolph Technologiesu tool was developed to control all films used in copper processing.
Applications include:Measurements for all thick and thin opaque films with angstom accuracy and subangstrom repeatabilityMetal film thickness measurements before silicide formation and determination of silicide phase, regardless of whether copper or aluminum interconnect is usedBarrier/adhesion layer and bulk metal layer thickness measurementsFilm property measurements such as density and roughnessTransparent ILD thickness measurements for dual damascene
<%=company%>, 1 Rudolph Road, Flanders, New Jersey 07836. Tel: 973-691-1300. Fax: 973-691-5480.
