Low Resistivity Performance SiC

Low Resistivity PerformanceSiC (patent pending) CVD silicon carbide, provides purity, stiffness, chemical and oxidation resistance, ability to withstand thermal shock, and dimensional stability combined with low electrical resistance—a useful combination for the process chamber. PerformanceSiC can satisfy any application that requires electrical conductivity, wear resistance, and thermal shock resistance, such as, heating elements, susceptors, chambers, sputter targets, processing chambers, gas distribution plates, edge rings, heaters, electrostatic chucks, and all types of electrodes.

PMI's conductive SiC is theoretically dense, intrinsically pure, has a high degree of chemical and process inertness, and has a bulk electrical resistivity of 0.012 ohm-cm. CVD silicon carbide traditionally serves a role in semiconductor processing applications such as RTP and oxide etch chamber components that take advantage of its thermal shock resistance and resistance to erosion by high energy plasmas.

Performance Materials, Inc. is a vertically integrated manufacturer of ultra-pure CVD silicon carbide, pyrolytic boron nitride, and other advanced ceramic materials for the semiconductor and compound semiconductor industries.