Product/Service

Low-k Barrier Film

Source: Applied Materials, Inc.
A low-k CVD barrier film, designated BLOk, is engineered as an alternative to silicon nitride films
A low-k CVD barrier film, designated BLOk, is engineered as an alternative to silicon nitride films. It is designed to reduce the dielectric constant (k) of copper damascene structures in order to achieve faster, more powerful devices. With a dielectric constant of less than 5, the film offers up to twice the etch selectivity of SiN, demonstrates leakage that is six to seven orders of magnitude better than conventional silicon carbide material, and features good adhesion to other films. The amorphous film is composed of silicon, carbon and hydrogen.

Applied Materials, Inc., 3050 Bowers Avenue, Santa Clara, CA 95054-3299. Tel: 408-727-5555. Fax: 408-748-9943.