Lam Research Introduces Microwave Stripper for High-Density Metal Etch System

Lam Research Corporationesearch Corp. (Fremont, Calif.) has released a microwave stripper option for its high-density TCP 9600SE metal etch system. The system, based on Lam's patented high-density Transformer Coupled Plasma etch technology, meets all requirements for aluminum and tungsten interconnect etch processing for sub-0.25-micron designs and has the ability to etch both metals in the same chamber configuration.

The compact design achieves throughput of two to three wafers per hour and includes diagnostic features that maximize uptime. The stripper's down-stream plasma source expands process capabilities for sub-0.25 micron device technologies by eliminating the potential for charge-induced damage of thin gate oxides.

Damage-free resist removal along with corrosion control, complete polymer removal, and the absence of polymer fences after wet strip are key industry concerns for post-metal etch resist removal. According to Lam, the microwave stripper has demonstrated success in all these parameters while delivering additional throughput. Furthermore, post-strip wafers have passed extensive charge monitor and antenna ratio studies for damage, as well as multiple corrosion tests—showing no corrosion during 48-hour wet box tests by Lam and customer testing at production facilities worldwide.

The system includes an isolator unit to extend the life of key components and a diagnostics panel for ease in maintenance. An autotune system speeds post-maintenance ramp-up and automatically tunes the microwave stripper, an advantage for multistep processing. Lam Research Corporationesearch Corp. provides wafer fabrication equipment and processing solutions for dry etch, chemical vapor deposition (CVD), and chemical mechanical planarization (CMP), three essential steps in the fabrication of integrated circuits.

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