Jazz 0.18-Micron SiGe BiCMOS Process Utilized To Deliver 100 Gb/s ICs
The 100 Gb/s IC used by Infinera was developed using Jazz Semiconductor's 0.18-micron SiGe BiCMOS process, SBC18QTD, which offers next-generation solutions for low-power, integrated wireless and optical products that require high-performance bipolar transistors, high-quality passives and 3.3V CMOS FETs suitable for moderate levels of mixed-signal and logic integrations. This platform is built upon Jazz Semiconductor's 0.18-micron Analog/RF CMOS baseline process and includes four layers of metal. This process includes two bipolar (NPN) transistors, 3.3V CMOS, lateral and vertical PNP transistors, 2fF/µm² MIM capacitors, resistors (poly, Nwell and metal), and high-Q inductors. Options include deep trench isolation, Schottky diode, high-performance varactors, triple well, a stacked 4fF/µm² MIM capacitor, four layers of metal, and thick top metal.
"Jazz process technologies are well-suited for our complex, highly advanced optical systems. Our multi-channel approach requires high levels of integration at high speed and low power, and the 0.18-micron SiGe BiCMOS technology has been a good fit," said David Welch, chief marketing and strategy officer at Infinera. "Their robust design kits and tools have allowed us to bring this product to market quickly, and Jazz has provided us with world-class support."
"Customers like Infinera can take advantage of our high-performance SBC18 platform to achieve aggressive performance and power consumption specifications as well as fast time-to-market for differentiated, highly integrated products," said Marco Racanelli, vice president of technology and engineering, Jazz Semiconductor. "We are pleased to sustain our successful relationship with Infinera as they continue to develop, design, and meet the ever-changing market demands for optical networking ICs."
SOURCE: Jazz Semiconductor