Ion Implanter
The system offers performance from 80keV down to 200eV covering high current applications for manufacturing as well as ultra shallow junction processes for advanced device development. High productivity is guaranteed with the batch wafer handling architecture that minimizes overhead time, including five-second repositioning time for quad implants. Integrated real time dose control improves productivity by increasing beam utilization while offering the process control necessary to build advanced devices. The xenon-based plasma charge neutralization ensures alignment with the accelerated SIA roadmap by providing the safest charging protection for devices with ultra-thin gate oxides.
<%=company%>, 55 Cherry Hill Drive, Beverly, MA 01915-1053, Phone: 978.232.4000, Fax: 978.232.4200