Ion Implantation System
Low energy implantation is an essential technology for the fabrication of semiconductors using 0.18 micron and below features. Nearly 100 of the company's implant systems using the xR80 and xR LEAP (Low Energy Advanced Processing) technology are currently in use by advanced chipmakers around the world, including over 40 xR LEAP systems.
Designed for 300mm wafers, the Quantum's evolutionary platform is easily adaptable to 200mm and 150mm wafer sizes. The system incorporates a 300mm compatible factory automation module for fully automatic wafer handling, yet remains almost the same size as the company's compact 200mm xR LEAP system.
Maximum 200mm mechanical throughput range has been extended from the xR LEAP to doses of 1E15, while the system achieves a 60% throughput increase when used for quad implants. Quantum's extremely short source-to-wafer beam path, which minimizes beam "blow up" and energy contamination, has been further optimized to improve precision at all energies. New technology ensures excellent energy accuracy and improved energy control for ultra-low energy implants to a remarkable ± 7.5 volts.
Quantum is initially available in three models for customers with different device and energy requirements. The Quantum LEAP for ultra-low energies offers a range of 200eV to 80keV, enabling customers to implant ultra shallow junctions in the most advanced devices. The Quantum 80 offers a range of 2keV to 80keV, covering virtually all of the high current implants used in 0.25 micron to 0.18 micron designs. For customers requiring an extended upper range, the Quantum 120 is available with an optional package that boosts energy to 120keV.
Applied Materials, 3050 Bowers Ave., Santa Clara, CA 95054. Tel: 408-727-5555. Fax: 408-986-8352.