Integrated Materials Launches SiFusion Poly Silicon Furnaceware

Sunnyvale, CA -- Integrated Materials, Inc. announces the worldwide launch of its poly silicon furnaceware called SiFusion. Already the tool of record at one semiconductor manufacturer in North America, the SiFusion suite of furnace components surpasses evaluation criteria for vertical furnace processes at numerous fabs, demonstrating performance superior to quartz and silicon carbide consumables.

The suite of SiFusion furnaceware includes furnace boats, towers, injectors and pedestals designed to fit furnaces manufactured by ASM, Aviza, Hitachi-Kokusai and Tokyo Electron. SiFusion furnaceware meets the requirements for vertical furnace applications in both 200 mm and 300 mm environments, including thin-film (LPCVD - silicon nitride and polysilicon), high temperature (anneal/drive), and High Temperature Oxidation, among others.

"The industry has waited more than 20 years for a company to manufacture furnaceware with properties identical to those of the wafer. SiFusion furnaceware is that product," said Tom Cadwell, president and CEO of Integrated Materials. "This innovation, now qualified in production environments, makes obsolete furnace consumables made from quartz and silicon carbide. With significantly longer lifespans, SiFusion poly silicon furnace boats, pedestals and injectors shift the product category away from consumables toward durable furnaceware."

The SiFusion technology provides improvements over traditional quartz and silicon carbide consumables. Its patented process enables the manufacture of semiconductor-grade, poly silicon furnaceware that reduce particles and metal contamination, prevent slip, and eliminate regular cleaning. Integrated Materials claims this patented SiFusion technology makes the company first to perfect the production of poly silicon structures for furnaces used in semiconductor manufacturing.

"By reducing in-furnace defect generation to the lowest possible levels, fabs can realize the productivity and yield goals of advanced IC production at 300 mm while also matching the quality expectations of mature processes," Cadwell said.

"We are confident this new technology will provide the wafer fab with solutions to the problems that have challenged furnace processes. SiFusion technology will enable continued use of batch processes to produce smaller device geometries, minimizing furnace operating cost and increasing device yield," Cadwell said.

SOURCE: Integrated Materials, Inc.