In Situ Temperature Measurement
APTOS 2 is used for in situ wafer temperature uniformity measurement in plasma processes, including etch, plasma strip, and CVD
N/Aused for in situ wafer temperature uniformity measurement in plasma processes, including etch, plasma strip, and CVD. The user can collect real-time data and analyze multiple process equipment variables to determine specific effects on wafer temperature at any time during the process. The system includes temperature measurement wafers instrumented with embedded fiber-optic sensors, and optoelectric interface, and a data analysis system. The system provides in situ multipoint temperature measurement to within 2 mm of the wafer edge under high-density plasmas from –60°C to 420°C. Measurement accuracy is +1°C below 130°C, +2°C from 130 to 20°C, and +3°C from 200°C to 420°C.
<%=company%>, 3410 Garrett Drive, Santa Clara, CA 95054, Tel: 408-330-5600
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