In Situ Direct Wafer Temperature Analysis System
Source: SensArray Corporation
APTOS 2 (Active Plasma Thermal Optical System) for in situ direct measurement of wafer temperatures and temperature uniformity during plasma processing
SensArray Corporation 2 (Active Plasma Thermal Optical System) for in situ direct measurement of wafer temperatures and temperature uniformity during plasma processing. The system collects real-time data and analyzes wafer temperature at any time during the process sequence. The interdependence between wafer temperature and process equipment conditions can be immediately measured and analyzed. Processes monitored include plasma etch, plasma photoresist strip, and plasma-enhanced chemical vapor deposition.
The system is used for temperature-related problem diagnosis and real-time in situ wafer temperature uniformity measurement in plasma processes. Up to 4 plasma-resistant fiber-optic sensors are embedded with in the Process Probe 2130 and 2140 series instrumented wafers. They are arranged in a linear array for center-to-edge monitoring within 2mm of the wafer edge. The system also includes an optoelectronic interface and a thermal MAP 3 data acquisition and analysis system. The instrumented wafers can operate in high density plasmas of up to 10 W/cm2 power density and at high RF or DC voltage bias potentials.
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