High Energy Ion Implantation System

Varian Semiconductor EquipmentIISta 3000 ion implanter expands the VIISta product offering to span all energy ranges from the ultra-low energies [less than 80 eV] used for ultra shallow junctions and materials modification, to ultra high energies [greater than 3.75 MeV] for engineering the 'wells' created in the manufacture of semiconductor chips.

The new ion implanter provides high doping capabilities for all high energy applications, coupled with high throughput for traditional medium current requirements. The VIISta 3000 includes all of the throughput and process advantages of single wafer ion implantation coupled with DC tandem-based high-energy ion acceleration.

With its DC tandem accelerator architecture coupled with in situ energy calibration, the system is the only high-energy ion implanter that directly measures and interlocks the final implant energy.

The single wafer VIISta platform, which includes a patented parallel beam, ensures precise and uniform incident angle control. This is a fundamental architectural advantage of the VIISta platform over alternative spinning disk 'batch' systems. The implanter minimizes shadowing, channeling effects and encroachment for high aspect ratio photoresist applications.

The system uses high-speed electrostatic beam scan technology in which the beam is swept across the wafer about 10 times more often than alternative (magnetic scan) approaches, providing process uniformity and higher yields.

The vacuum system architecture and dosimetry control systems utilized on the system have been optimized to provide immunity to shifts in dopant location or quantity due to undesired changes in dopant energy or ionization.

The implanter provides the demonstrated advantages of single wafer processing including precise high tilt control and exceptional energy purity coupled with superior particulate and metallic contamination control.

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