Torrance, CA -- GCS, Inc. (Global Communication
Semiconductors, Inc.), a pure-play III-V compound semiconductor wafer
foundry announced that its proprietary 0.25um PHEMT process will now
be offered to address the mmW frequency applications.
"Our low cost 0.25um PHEMT process was developed specifically for
transceiver MMIC components. The device features high frequency
characteristics of FT>60 GHz and Fmax>150 GHz, with Gmax>15dB at 30 GHz. It
is ideal for PA, gain blocks, LNA, mixers, switches and other discrete or
MMIC components with operations through Ka-Band (or up to 40GHz) frequency.
The unique feature of this process is utilizing "optical" gate lithography,
which allows low cost manufacturing and short cycle time," commented Jerry
Curtis, Chief Executive Officer of GCS. "With a two terminal gate-to-drain
breakdown voltage of >18V and a pinch off voltage of -1.0V, this process
allows safe operation of up to 8V drain bias which opens up many options of
operations, especially in the mmW PA area. As a performance example, at 30
GHz when biased at Vds=6V, our device demonstrated a power density greater
than 400mW/mm with an associated gain of 9.4 dB and a PAE >41%. Thanks to
the advance of 0.25um "optical" gate lithography, high performance and high
dynamic range mmW MMICs are now made affordable for applications such as
LMDS, PTP, VSAT, etc.," Jerry Curtis said.
SOURCE: Global Communication