Fairchild Semiconductor Establishes Chicago Power Design Center

South Portland, ME -- Fairchild Semiconductor adds to its growing number of worldwide Global Power Resource Design Centers with the addition of the Chicago, Illinois laboratory. This design center provides expertise in quasi-resonant designs offering less noise, lower EMI and higher efficiency than hard-switching, fixed-frequency designs in applications such as color TVs and set-top boxes. Additionally, Fairchild's quasi-resonant designs offer design engineers an integrated solution that combines a MOSFET and controller in one package.

"Fairchild's Chicago Power Design Center provides solutions for AC/DC applications in the complete range of power from 2 W and 5 W adapters for cell phones and for 200 W quasi-resonant designs in televisions," says Carl Walding, applications manager, Chicago Power Design Center. "We're able to provide a total power design solution utilizing Fairchild products to optimize efficiency, increase performance, reduce part count and inventory costs, while improving the end applications' time-to-market."

The strength of the Chicago Power Design Center stems from its experienced technical staff of design engineers and a network of field application engineers with years of industry experience partnering with customers to address their power requirements. Fairchild's design centers create a design from schematic capture through board layout, prototype build, characterization, BOM selection and manufacturability review.

These state-of-the-art design centers are part of Fairchild's Global Power Resource -- a worldwide network of design labs, systems application experts, online design tools, evaluation boards and joint research and development labs. Fairchild's design centers are located in the United States, Germany, Taiwan, Korea and several locations in China. Fairchild plans to double the number of power design centers with additional laboratories scheduled to open in China, South America, Korea, and Japan.

SOURCE: Fairchild Semiconductor, RF Power Group