Electra Cu Integrated ECP
Annealing is a key step in the copper process flow that increases the conductivity of the deposited copper and stabilizes it for subsequent CMP (chemical mechanical polishing). Traditionally performed in a separate furnace, this process can now be done with the Electra Cu Integrated ECP system, saving customers costly cleanroom floorspace, increasing electroplating productivity, reducing cycle time and minimizing wafer contamination. Also integrated on the system is a new bevel clean process with guaranteed 3mm edge exclusion that enables higher yields by extending the number of usable die per wafer.
The system's high throughput is a result of its unique dual-blade wafer handling architecture. After the wafers have been electroplated in the dual ECP cells, they are sent to twin Bevel Clean chambers where excess copper is removed from the wafer backside and rim. A spin/rinse/dry process is followed by a rapid anneal treatment, also performed in dual chambers. With the edge clean and anneal steps, the system maintains an extremely high throughput of over 70 wafers per hour with no change in system footprint. Both 200mm and 300mm wafers can be accommodated by the same system platform.
The system is specifically designed for volume manufacturing, featuring the industry's first computer-controlled closed-loop chemical management system that automatically controls the electrolyte and additive chemistries to specified levels. This capability ensures consistent plating performance and repeatable results while eliminating the need to perform off-line chemical sampling and analysis. A proprietary low-conductivity, low-acid electrolyte chemistry enables uniform, void-free copper fill.
Applied Materials, 3050 Bowers Ave., Santa Clara, CA 95054. Tel: 408-727-5555. Fax: 408-986-8352.