Discrete Wavelength Ellipsometry with Easy Sample Alignment

The Sentech Model SE-400-ESA uses the ellipsometer beam to align the sample. The operator looks at moving markers on the computer screen as the tilt and height of the sample are manually adjusted or with an optional autofocus feature. The computer even tells the operator when the sample is properly aligned and prompts the operator prior to each measurement. This technique removes the tedious, operator dependent method of alignment through the eyepiece of an autocollimating telescope mounted above the sample.

The SE-400-ESA speeds up and simplifies the process of analyzing and interpreting ellipsometric data on simpler thin film layer stacks such as photo resists, oxides and nitrides on silicon, ITO on glass and many others. It provides a means to quickly determine film thicknesses in the range from 1nm to several microns, as well as refractive index, and extinction coefficient.

The instrument's comprehensive Windows 95- based thin film library contains many predetermined measurement parameters and permits the user to generate an application template and quickly measure and display the results with a single click of the mouse.

The instrument can accommodate many different kinds of samples including semiconductor wafers up to 8 inches in diameter, thick bulky samples and liquid cells.

The sample stage can be adjusted in tilt and height for alignment and rotated and translated for sample measurement spot positioning.

An available precision mapping stage permits the mapping and graphical display of the thickness, refractive index and other measured parameters of the film. Other accessories include a simulation software package for evaluating ellipsometric data on multilayer structures up to 5 layers. Additional wavelengths can be added from 550 nm to 1.5 microns, with the standard source being the 632.8nm HeNe laser.

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