Product/Service

CVD Silicon Carbide Temperature Dependent Properties

CVD SILICON CARBIDE is a high temperature material with a sublimation temperature of about 2700 degrees C
New Page 1
CVD SILICON CARBIDE
TEMPERATURE DEPENDENT PROPERTIES

CVD SILICON CARBIDE is a high temperature material with a sublimation temperature of about 2700 degrees C. In an inert environment this material can be conveniently used up to a temperature of 2000 degrees C. Above this temperature, there is an onset of phase change from cubic beta phase to hexagonal alpha phase. As one can see in the table below, the material can be safely used up to a temperature of 1500 degrees C in air with a good retention of thermal and mechanical properties.


Summary of Temperature Dependence of Important Mechanical,
Electrical and Thermal Properties
of CVD SILICON CARBIDE

DEGREES C -140 -100 0 200 500 700 1000 1200
Specific Heat
(JKg-1K-1)		 175 301 574 952 1134 1189 1251 1295
Thermal Conductivity
(Wm-1K-1)		 396 485 333 221 137 110 78 63
Thermal Expansion Coefficient
(K-1 x 10-6)		 0.4 0.8 1.9 3.7 4.6 4.9 5.0 5.1
Elastic Modulus
(GPa)		 - - 460 457 450 440 435 422
Flexural Strength
(MPa)		 460 465 470 480 500 515 540 555

N/A, 185 New Boston Street, Woburn, MA 01801. Tel: 781-933-9243; Fax: 781-933-5142.