CVD Silicon Carbide For Semiconductor Processing Components
Morton's bulk chemical vapor deposition (CVD) process produces the highest
purity (>99.9995%) solid cubic beta SiC components for wafer processing and handling
equipment. Free standing monolithic parts of solid CVD SILICON CARBIDE offer superior
chemical resistance, thermal conductivity, stiffness and thermal shock resistance.
Components made of CVD SILICON CARBIDE exhibit low particle generation, are free of
graphite and other contaminants, and are useable at elevated temperatures (>1500oC).
CVD SILICON CARBIDE is available in both low (<10 Ohm-cm) and high (>1,000
Ohm-cm) electrical resistivity grades.
CVD SILICON CARBIDE is resistant to degradation and etching due to flourine, chlorine,
bromine based plasmas, electron beam, atomic oxygen, acids and bases. Due to its chemical
inertness, CVD SILICON CARBIDE components can be cleaned repeatedly in hydrochloric acid,
sulfuric acid, nitric acid and HF solutions without loss of dimensional accuracy. In
addition, in-situ etching of semiconductor processing chambers with hydrochloric acid can
be performed at elevated temperatures without degrading the wafer support components made
of CVD SILICON CARBIDE .
Some current semiconductor applications where CVD SILICON CARBIDE is being used include
wafer support components such as susceptors, slip rings, lift pins, electrodes, focus
rings, chamber liners and other components for processes such as RTP; plasma etch; CVD;
Epi; ion implant; lithography; and dry, vapor-phase and wet cleaning.
| CVD SILICON
CARBIDE and Competing Material Properties Comparison |
Typical Material Properties |
Material |
Purity % |
Porosity % |
Density g/cc |
Flexural Strength Ksi |
Elastic Modulus GPa |
CTE RT to 10000C (1/K x 10-6) |
Thermal Conduct. W/mK |
| CVD SILICON CARBIDE | 99.9995+ |
None |
3.21 |
68 |
466 |
4.0 |
300 |
| HP SiC | 97 to 99 |
< 1 |
3.20 |
75 to 109 |
450 |
4.5 |
130 to 180 |
| RB SiC | 99+ |
<1 |
3.08 |
33 |
393 |
4.5 |
125 |
| Direct Sinter SiC | 99 |
4 |
3.10 |
55 |
410 |
4.0 |
125 |
| HP Alumina | 99.5 |
<1 |
3.95 |
80 |
380 |
8.2 |
40 |
| Sintered Alumina |
99.5 to 99.8 |
1 to 2 |
3.86 to 3.9 |
45 to 52 |
350 to 370 |
7.4 to 8.2 |
30 |
| Sintered SiN | 98.8 |
<1 |
3.20 |
102 |
310 |
3.2 |
35 |
| HP SiN | 99+ |
<1 |
3.15 to 3.18 |
93 to 116 |
310 |
3.2 to 3.5 |
40 |
| HP AlN | 96 to 99.9 |
<1 |
3.25 |
44 to 62 |
310 to 330 |
4.3 to 5.0 |
80 to 150 |
| Quartz | 99.98+ |
<1 |
2.2 |
15 |
70 |
0.5 |
1.4 to 2.5 |
| Poly Silicon | 99.999+ |
None |
2.3 |
110 |
3.8 |
150 |
| HP = Hot Pressed or Hot Isostatic Pressed RB = Reaction Bonded with Si Metal |
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