Cree Announces First Power Switch And Diode Co-Pack

Durham, NC - Cree, Inc., an innovator and manufacturer of silicon carbide (SiC) power semiconductors, recently announced sample availability of its first power-device combination pack (co-pack). According to Cree, the new Cree co-pack solution is designed specifically to reduce costs and increase efficiency of inverters used in solar, UPS and motor-drive power applications.

The new Cree CID150660 co-pack features a 6-amp/600-volt Cree SiC Schottky diode combined with a 15-amp silicon insulated gate bipolar transistor (IGBT) from International Rectifier. It is available in an industry-standard TO-220-3 package.

"Cree's new co-pack provides inverter designers with the potential to achieve new levels of efficiency at power levels up to 3 kW," said Stuart Hodge, Cree manager of applications engineering for power devices. "This is the first in a series of co-pack products targeted to reduce IGBT switching losses up to 50 percent and reduce overall inverter losses up to 25 percent. When compared with traditional silicon-based pn diodes, Cree's SiC-based Schottky diodes and co-pack solutions provide lower switching losses, higher frequency operation, and higher power densities."

Additional information about Cree power devices and co-pack solutions, including device specifications and application notes, may be obtained by calling Cree at 919-313-5300 or by visiting www.cree.com.

SOURCE: Cree, Inc.