Copper CMP Solution
After an initial removal of the copper material, customers can choose either a non-selective or selective process to polish the barrier film, depending on their dual damascene integration strategy.
The non-selective process uses a breakthrough, cost-effective approach to removing the barrier film, as well as uncapped dielectric materials such as oxide, FS(fluorinated silicate glass) and the Black Diamond film. The selective CMP process is designed to planarize and preserve the top dielectric layers used in capped low (kappa) dielectric applications. Both solutions can simplify the process sequence by eliminating the need for an additional dielectric polishing step and thereby lowering manufacturing costs.
Process control is provided by the Mirra Mesa CMP system's FullScan endpoint technology that identifies the point at which film removal is complete across the wafer. This capability, combined with the process sequence, minimizes dishing and erosion of copper wiring structures, creating the flat surface topography needed to create multiple layers of interconnects.
The system's copper process has been characterized and tested for low defect levels. Process development was performed using Applied Materials, Inc.erials' WF-736XS wafer inspection and SEMVision defect review systems to systematically reduce levels of particles and microscratches early in the development phase. The system's Mesa integrated post-CMP cleaning station uses megasonic cleaning technology and double-sided brush scrubbing to help resist corrosion and remove particles and slurry residue from both sides of the wafer, including very small recessed features and difficult bevel regions.
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