Capacitor Dielectric Solution for Advanced DRAM Manufacturing

Applied Materials, Inc.p TanOx Centura is a high-productivity system for the deposition of high k tantalum pentoxide (Ta2O5) dielectric films in advanced DRAMs.

The system integrates the company's CVD (chemical vapor deposition) and RTP (rapid thermal processing) technologies to provide customers with a production-worthy process to enable denser, more powerful memory chips.

The system's Ta2O5 deposition/anneal process enables precise control of capacitance and leakage current, meeting the electrical and thermal budget requirements for DRAM (and embedded DRAM) devices with 0.15µm geometries and below. Thin TanOx films (80 angstroms) deposited at low temperature (<450°C) provide smooth surface morphology and conformal step coverage for advanced capacitor structures, and are extendible for several DRAM generations.

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