Product/Service

Bi-Polar Pulsed DC

Source: Advanced Energy Industries, Inc.
The Astral 120 bi-polar dc pulsing power supply is designed for industrial dual- and single-cathode sputtering applications, offering up to 120 kW of delivered power.
Advanced Energy Industries, Inc.120 bi-polar dc pulsing power supply is designed for industrial dual- and single-cathode sputtering applications, offering up to 120 kW of delivered power. A key advantage of this unit is that it can increase deposition due to the ability of a bi-polar dc square wave to deliver more power into the load at the requested power level. Another advantage is that the user can independently adjust the power to each cathode in a dual-cathode system, enabling him/her to continue operation at the prescribed throughput. With this capability, users can adjust the output power to each target to compensate for differences in cathodes. This is especially critical for applications such as reactive sputtering using two cathodes of different sizes or making alloys of two materials where the alloy proportion must be controlled. Further, a patented arc-prevention circuit reduces arc-related defects, providing higher yields.

The rugged Astral 120 unit offers both square wave uni-polar and bi-polar power outputs. With uni-polar and bi-polar operation, users can power one or two magnetrons. Bi-polar operation allows balance of the deposition rate between two cathodes.

Advanced Energy Industries, Inc.120 system consists of two dc power supplies and the pulse unit as the fast switch unit. The pulse unit allows the user to adjust the output frequency between 20 kHz to 34.7 kHz in bi-polar mode and 40 kHz to 60 kHz in uni-polar mode. Advanced Energy Industries, Inc.120 system can be used to improve process yield and quality in existing sputtering system or in a new system.

Benefits

  • Can increase deposition because its bi-polar dc square wave delivers more power into the load at the requested power level
  • Field-proven process benefits large-area coating applications
  • Increases yield due to significantly reduced arc-related defects
  • Allows user to adjust the power to each cathode independently
  • Controls relative target power dynamically during sputtering
  • Enables reactive sputtering with two targets of differing size (or different materials) with precise power control to each
  • Allows film deposition of controlled and graded indices of refraction by sputtering two different metals in reactive processes

Features

  • Independent control of each magnetron
  • Real-time adjustable frequency and duty cycle
  • Voltage-based arc detection and control methods
  • Over-voltage protection
  • Very low stored output energy prevents arc damage due to dielectric breakdown on target
  • Patented arc-prevention circuit provides arc-free reactive and metal deposition at high power and low frequency
  • Fault handling prevents the output from being turned on in the case of internal interlock loops, input power failure, or over-temperature
  • High efficiency deposition due to square wave form
  • 1200 V over-shoot voltage limit during switching
  • Stable reactive deposition process due to constant anode
  • Dual floating output configuration (allows you to bias the unit)
  • Regulation on average input voltage, average output current, or average output power
  • Remote panel control

<%=company%>, 1625 Sharp Point Dr., Fort Collins, CO 80525. Tel: 970-221-0108. Fax: 970-221-5583.