Aluminum Sputtering Target
ASEM's Wafer Fabrication Materials' (WFM) new target has a typical grain size of 0.5 micron, whereas the traditional process of forging and rolling aluminum yields grain sizes ranging from 50 to 200 microns. A feature of this new target is extremely fine precipitate distribution with a reduction of over 1000 times in average size as compared to traditional targets. Finer grains improve the microstructure of the target by dramatically reducing the size distribution. This translates directly to a smoother, more consistent sputtering surface which provides customers with fewer defects caused by arcing. In fact, field tests have showed an over 60% reduction in cumulative arcing levels compared with conventional processed material. Aluminum sputtering targets are used during the PVD process for depositing thin films of high-purity material onto a wafer. PVD continues to grow in importance as the number of circuit layers on chips continue to increase.
With the global semiconductor industry considering a transition to larger 300mm diameter wafers, sputtering targets must be made bigger, but they also must be stronger to resist warping during high temperature processing. The transition to 300mm PVD processing increases the tendency for target warping due to the large target diameters (over 20" in size). Conventionally processed high purity Al-0.5%Cu (the leading interconnect alloy) has low mechanical strength. Testing has shown that APX UF grade materials show over a 5 times increase in material strength compared to conventionally processed high purity Al.
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