125 WPH KrF Scanner
Source: Canon USA, Semiconductor Equipment Division
The FPA-5000ES2+ is a "dual era" KrF scanner. Its platform accommodates both 0.18µm and 0.15µm design rules and allows field conversion from 200mm to 300mm wafer format within a day
Canon USA, Semiconductor Equipment Division0ES2+ is a "dual era" KrF scanner. Its platform accommodates both 0.18µm and 0.15µm design rules and allows field conversion from 200mm to 300mm wafer format within a day. With design modifications, the laser power and illumination intensity of Canon USA, Semiconductor Equipment Division0ES2+ KrF Scanner have been increased to provide higher wafer throughput. It can print 125 wafers per hour on 200mm wafers using a 2-kHz laser.
The 0.68 NA FPA-5000ES2+ features Canon's ULTiMA lens assembly and Zernike coefficient analysis lens tuning for low wavefront aberration. The pre-scan focus system provides consistent scanning performance on and off the wafer edge dies. Overlay accuracy is further improved (25nm) by applying air flow and temperature control within the machine chamber and by using a hybrid active damper.
SPECIFICATIONS:
- Reduction Ratio: 4:1
- NA: 0.45 - 0.68 variable
- Resolution: 0.15µm (2/3 annular)
- Image Field Size: 26mm ¥ 33mm
- Exposure Wavelength: 248nm
- Illumination: 2kHz KrF excimer laser
- Reticle Size: 6 inch, 0.25-inch thickness
- Wafer Size: 200mm or 300mm
- Overlay Accuracy: 25nm (m + 3s)
- Throughput: 125 WPH (200mm), 73 WPH (300mm)
- Main Body Dimensions: 2300mm(W) ¥ 3250mm(D) ¥ 2800mm (H)
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