News | October 26, 2023

Transphorm TOLT-FET With Top-Side Cooling Provides Superior Thermal And Electrical Performance For Computing, AI, Energy And Vehicle Propulsion Systems

Goleta, CA - ( BUSINESS WIRE ) - Transphorm, Inc. (Nasdaq: TGAN), a global leader in robust GaN power semiconductors – the future of next-generation power systems – today introduced the SuperGaN® TOLT FET before. With an on-resistance of 72 milliohms, the TP65H070G4RS transistor is the industry's first top-cooled GaN device in a JEDEC-compliant (MO-332) TOLT package. The TOLT package provides additional thermal management flexibility for customers whose system requirements do not allow for conventional surface mounting with bottom cooling. The thermal performance of the TOLT is comparable to common thermally robust TO-247 through-hole packages, with the added benefit of a highly efficient manufacturing process thanks to SMD-based printed circuit board assembly (PCBA).

The TP65H070G4RS leverages Transphorm's robust, high-performance, 650-volt normal-off D-mode GaN platform, which delivers improved efficiency through lower gate charge, output capacitance, crossover losses compared to silicon, silicon carbide and other GaN solutions , reverse recovery charging and dynamic resistance. The advantages of the SuperGaN platform combined with TOLT's superior thermal properties and system assembly flexibility result in a high-performance and reliable GaN solution for customers seeking to bring power systems to market with higher power density and efficiency at a lower overall system cost.

In high-performance GaN, Transphorm works with several global partners, including leading server and storage customers, a global leader in power/microinverters, an innovative manufacturer of off-grid power solutions, and a leading satellite communications company.

“Surface mount devices such as the TOLL and TOLT offer several advantages, such as lower internal inductance and easier PCB assembly during manufacturing. The TOLT contributes to more flexible thermal management that provides comparable thermal performance to through-hole housing due to top-side cooling,” said Philip Zuk, SVP Business Development and Marketing, Transphorm. “These devices are commonly used in system applications with medium to high performance requirements in key market segments such as high-performance computing (servers, telecommunications, AI power), renewable energy and industry, and electric vehicles, some of which are already powered by our GaN technology become. We are pleased to be able to offer our customers additional system-level benefits with TOLT SuperGaN solutions.”

Today's product launch follows the recent market debut of Transphorm's three new TOLL FETs . The addition of the TOLT further expands the company's product offering. Its availability underscores Transphorm's efforts to respond to customer needs by offering its SuperGaN platform in various packages across the full power range.

Component specifications
SuperGaN devices are market leading and unmatched:

  • Reliability at < 0.05 FIT
  • Gate safety margin at ±20V
  • Noise immunity at 4 V
  • Temperature coefficient of resistance (TCR) 20% lower than normally off E-mode GaN
  • Drive flexibility with commercially available silicon drivers

The robust 650V SuperGaN TOLT device is JEDEC compliant. Because the normally off D-mode platform combines the GaN HEMT with an integrated low-voltage silicon MOSFET, the SuperGaN FETs can be easily driven with commercially available gate drivers. They can be used in various hard and soft switching AC/DC, DC/DC and DC/AC topologies to increase power density while reducing system size, weight and overall cost.


Dimensions (mm)

RDS(on) (mΩ) typ.

RDS(on) (mΩ) max.

Vth (V) typ.

Id (25 °C) (A) max.







Availability and complementary resources

The TP65H070G4RS SuperGaN TOLT device is currently available as a sample. To receive a product, submit a request at .

The datasheet of the TP65H070G4RS can be found here:

About Transphorm
Transphorm, Inc., a global leader in the GaN revolution, designs and manufactures high-performance, high-reliability GaN semiconductors for high-voltage power converters. With one of the largest power GaN IP portfolios of more than 1,000 owned or licensed patents, Transphorm produces the industry's first JEDEC and AEC-Q101 qualified high-voltage GaN semiconductor devices. The company's vertically integrated device business model promotes innovation at all stages of development: design, manufacturing, device and application support. Transphorm's innovations push power electronics beyond the limits of silicon, achieving over 99% efficiency, 50% higher power density and 20% lower system costs. Transphorm is headquartered in Goleta, California, with manufacturing facilities in Goleta and Aizu, Japan. More information at . Follow us on Twitter @transphormusa and WeChat @Transphorm_GaN.

The SuperGaN trademark is a registered trademark of Transphorm, Inc. All other trademarks are the property of their respective owners.

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